2

RF Device Data

Freescale Semiconductor, Inc.

AFT09S200W02NR3 AFT09S200W02GNR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +70

Vdc

Gate--Source Voltage

--6.0, +10

Vdc

Operating Voltage

32, +0

Vdc

Storage Temperature Range

--65 to +150

C

Case Operating Temperature Range

--40 to +125

C

--40 to +225

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

0.35

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2

Machine Model (per EIA/JESD22--A115)

B

Charge Device Model (per JESD22--C101)

IV

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

Adc

Zero Gate Voltage Drain Leakage Current

—

—

5

Adc

Gate--Source Leakage Current

—

—

1

Adc

On Characteristics

Gate Threshold Voltage

1.0

1.5

2.0

Vdc

Gate Quiescent Voltage

—

2.15

—

Vdc

3.2

4.3

5.2

Vdc

Drain--Source On--Voltage

0.1

0.2

0.3

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select

Documentation/Application Notes -- AN1955.

(continued)