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AFT09S200W02N 数据表(PDF) 6 Page - NXP Semiconductors

部件名 AFT09S200W02N
功能描述  N-Channel Enhancement-Mode Lateral MOSFET
PDF  19 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

AFT09S200W02N 数据表(HTML) 6 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
AFT09S200W02NR3 AFT09S200W02GNR3
TYPICAL CHARACTERISTICS — 920–960 MHz
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
--10
--20
15
21
0
60
50
40
30
20
D
20
19
10
100
200
10
--60
18
17
16
0
--30
--40
--50
Figure 7. Broadband Frequency Response
0
24
f, FREQUENCY (MHz)
VDD =28 Vdc
Pin =0 dBm
IDQ = 1400 mA
16
12
8
20
4
800
850
900
950
1000
1050
1100
1150
1200
--35
25
15
5
--5
--15
--25
Gain
VDD =28 Vdc,IDQ = 1400 mA
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01%
Probability on CCDF
IRL
920 MHz
940 MHz
960 MHz
920 MHz
940 MHz
960 MHz
920 MHz
940 MHz
960 MHz
Gps



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