AFT09S200W02NR3 AFT09S200W02GNR3

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

These 56 W RF power LDMOS transistors are designed for cellular base

station applications requiring very wide instantaneous bandwidth capability

covering the frequency range of 716 to 960 MHz.

900 MHz

Probability on CCDF.

Frequency

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

920 MHz

19.2

34.0

6.9

--35.7

--25

940 MHz

19.3

35.1

7.0

--36.0

--20

960 MHz

19.2

36.5

6.8

--34.8

--13

700 MHz

Probability on CCDF.

Frequency

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

716 MHz

22.7

37.5

6.9

--34.7

--18

722 MHz

22.6

37.2

6.9

--34.6

--19

728 MHz

22.5

36.9

6.9

--34.6

--18

Features

 Designed for Wide Instantaneous Bandwidth Applications

 Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

 Able to Withstand Extremely High Output VSWR and Broadband

Operating Conditions

 Optimized for Doherty Applications

 In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

Document Number: AFT09S200W02N

Rev. 0, 4/2014

Freescale Semiconductor

Technical Data

716–960 MHz, 56 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTORS

AFT09S200W02NR3

AFT09S200W02GNR3

Figure 1. Pin Connections

(Top View)

21

OM--780--2L

PLASTIC

AFT09S200W02NR3

OM--780G--2L

PLASTIC

AFT09S200W02GNR3

Note: Exposed backside of the package is

the source terminal for the transistor.

 Freescale Semiconductor, Inc., 2014. All rights reserved.