NXP Semiconductors

BGS8H2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8H2

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© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 3 — 29 June 2018

COMPANY CONFIDENTIAL

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4 Quick reference data

Table 1. Quick reference data

Unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max Unit

supply voltage

RF input AC coupled

[1] 1.5

-

3.1

V

in gain mode

3.8

5.8

7.8

mA

supply current

-

-

1

µA

in gain mode; f = 2350 MHz

[2][3] 10.5 12.5 14.5 dB

power gain

in bypass mode; f = 2350 MHz

[2][3] -3.8 -2.3 -0.8 dB

NF

noise figure

in gain mode; f = 2350 MHz

[2][3][4] -

1.0

1.5

dB

input power at 1 dB gain compression in gain mode; f = 2350 MHz

[2][3] -5.5 -1.5 -

dBm

input third-order intercept point

in gain mode; f = 2350 MHz

[2][3] −1.0 +4.0 -

dBm

[1]

[2]

E-UTRA operating band 40 (2300 MHz to 2400 MHz).

[3]

Guaranteed by device design; not tested in production.

[4]

PCB losses are subtracted.

5 Ordering information

Table 2. Ordering information

Package

Type number

Name

Description

Version

BGS8H2

XSON6

plastic extremely thin small outline package; no leads; 6 terminals;

body 1.1 x 0.7 x 0.37 mm

SOT1232

OM17007

EVB

BGS8H2 evaluation board

-

6 Marking

Table 3. Marking code

Type number

Marking code

BGS8H2

P