NXP Semiconductors

BGS8H2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8H2

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© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 3 — 29 June 2018

COMPANY CONFIDENTIAL

8 / 15

[1]

Guaranteed by device design; not tested in production.

[2]

E-UTRA operating band 40 (2300 MHz to 2400 MHz).

[3]

E-UTRA operating band 7 (2620 MHz to 2690 MHz).

[4]

PCB losses are subtracted.

series. Unless otherwise specified.

Symbol Parameter

Conditions

Min Typ Max Unit

between gain mode and bypass mode

f = 2350 MHz

[1] -8

-

+8

deg

Δφ

phase variation

f = 2655 MHz

-

-

-

deg

Gain mode

supply current

3.8

5.8

7.8

mA

f = 2350 MHz

[1][2] 10.5 12.5 14.5 dB

f = 2500 MHz

9.9

11.9 13.9 dB

power gain

f = 2655 MHz

[1][3] 9.2 11.2 13.2 dB

f = 2350 MHz

[2] -

8.0

-

dB

input return loss

f = 2655 MHz

[3] -

8.5

-

dB

f = 2350 MHz

[2] -

10.0 -

dB

output return loss

f = 2655 MHz

[3] -

7.0

-

dB

f = 2350 MHz

[2] -

23.0 -

dB

ISL

isolation

f = 2655 MHz

[3] -

23.0 -

dB

f = 2350 MHz

[1][2][4] -

1.00 1.5

dB

NF

noise figure

f = 2655 MHz

[1][3][4] -

1.10 1.6

dB

f = 2350 MHz

[1][2] -5.5 -1.5 -

dBm

input power at 1 dB gain

compression

f = 2655 MHz

[1][3] -4.0 0.0 -

dBm

f = 2350 MHz

[1][2] -1.0 +4.0 -

dBm

input third-order intercept point

f = 2655 MHz

[1][3] -1.0 +4.0 -

dBm

K

Rollett stability factor

1

-

-

turn-on time

-

-

1.3

µs

turn-off time

-

-

0.3

µs