NXP Semiconductors

BGS8H2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

BGS8H2

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© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 3 — 29 June 2018

COMPANY CONFIDENTIAL

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15 Handling information

CAUTION

msc896

This device is sensitive to ElectroStatic Discharge (ESD). Observe

precautions for handling electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST

61340-5, JESD625-A, or equivalent standards.

16 Abbreviations

Table 11. Abbreviations

Acronym

Description

ESD

ElectroStatic Discharge

HBM

Human Body Model

LTE

Long-Term Evolution

MMIC

Monolithic Microwave Integrated Circuit

PCB

Printed-Circuit Board

SiGe:C

Silicon Germanium Carbon

17 Revision history

Table 12. Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BGS8H2 v.3

20180629

Product data sheet

-

BGS8H2 v.2

Modifications:

BGS8H2 v.2

20160404

Product data sheet

-

BGS8H2 v.1

Modifications:

• added phase variation Table 8 on page 5 and Table 9 on page 6

BGS8H2 v.1

20151222

Product data sheet

-

-