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BGS8H2 数据表(PDF) 10 Page - NXP Semiconductors |
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BGS8H2 数据表(HTML) 10 Page - NXP Semiconductors |
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10 / 15 page ![]() NXP Semiconductors BGS8H2 SiGe:C low-noise amplifier MMIC with bypass switch for LTE BGS8H2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved. Product data sheet Rev. 3 — 29 June 2018 COMPANY CONFIDENTIAL 10 / 15 13 Application information 13.1 LTE LNA aaa-006409 6 L1 2 1 4 3 RFout RFin VCTRL Vcc C1 5 IC1 For a list of components, see Table 10. Figure 3. Schematics LTE LNA evaluation board Table 10. List of components For schematics, see Figure 3. Component Description Value Remarks C1 decoupling capacitor 1 μF to suppress power supply noise IC1 BGS8H2 - NXP Semiconductors L1 high-quality matching inductor 2.7 nH Murata LQW15A |
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