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BGS8L2 数据表(PDF) 3 Page - NXP Semiconductors |
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BGS8L2 数据表(HTML) 3 Page - NXP Semiconductors |
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3 / 18 page ![]() NXP Semiconductors BGS8L2 SiGe:C Low-noise amplifier MMIC with bypass switch for LTE BGS8L2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved. Product data sheet Rev. 6 — 29 June 2018 COMPANY PUBLIC 3 / 18 4 Quick reference data Table 1. Quick reference data f = 882 MHz; VCC = 2.8 V; VI(CTRL) ≥ 0.8 V; Tamb = 25 °C; input matched to 50 Ω using a 8.2 nH inductor; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCC supply voltage 1.5 - 3.1 V in gain mode - 5.2 - mA ICC supply current in bypass mode - - 1 μA in gain mode [1] - 13.0 - dB Gp power gain in bypass mode [1] - -1.9 - dB NF noise figure [1][2] - 0.85 - dB Pi(1dB) input power at 1 dB gain compression [1] - -1.0 - dBm IP3i input third-order intercept point [1] - 1.5 - dBm [1] E-UTRA operating band 5 (869 MHz to 894 MHz). [2] PCB losses are subtracted. 5 Ordering information Table 2. Ordering information Package Type number Name Description Version BGS8L2 XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 × 0.7 × 0.37 mm SOT1232 OM17005 EVB BGS8L2 evaluation board - 6 Marking Table 3. Marking codes Type number Marking code BGS8L2 M |
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