NXP Semiconductors

BGS8L2

SiGe:C Low-noise amplifier MMIC with bypass switch for LTE

BGS8L2

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© NXP B.V. 2018. All rights reserved.

Product data sheet

Rev. 6 — 29 June 2018

COMPANY PUBLIC

7 / 18

12 Characteristics

figure 3 and component values as in table 10. Unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Gain mode

supply current

3.0

5.0

7.0

mA

f = 470 MHz, L1 = 18 nH

[1] 11.5

13.5

15.5

dB

f = 650 MHz, L1 = 18 nH

[1] 12.5

14.5

16.5

dB

f = 740 MHz, L1 = 18 nH

[1] 12.0

14.0

16.0

dB

f = 740 MHz, L1 = 8.2 nH

[1] [2] 11.5

13.5

15.5

dB

f = 882 MHz, L1 = 8.2 nH

[3] 11.0

13.0

15.0

dB

power gain

f = 943 MHz, L1 = 8.2 nH

[1] [4] 10.5

12.5

14.5

dB

f = 470 MHz, L1 = 18 nH

[5] -

4.5

-

dB

f = 650 MHz, L1 = 18 nH

-

12

-

dB

f = 740 MHz, L1 = 18 nH

[2] -

10.5

-

dB

f = 740 MHz, L1 = 8.2 nH

[2]

7.5

dB

f = 882 MHz, L1 = 8.2 nH

[3] -

12.0

-

dB

input return loss

f = 943 MHz, L1 = 8.2 nH

[4] -

13.0

-

dB

f = 470 MHz, L1 = 18 nH

-

10

-

dB

f = 650 MHz, L1 = 18 nH

-

20.5

-

dB

f = 740 MHz, L1 = 18 nH

[2] -

21.0

-

dB

f = 740 MHz, L1 = 8.2 nH

[2]

21.0

dB

f = 882 MHz, L1 = 8.2 nH

[3] -

11.0

-

dB

output return loss

f = 943 MHz, L1 = 8.2 nH

[4] -

10.0

-

dB

f = 470 MHz, L1 = 18 nH

-

28.0

-

dB

f = 650 MHz, L1 = 18 nH

-

24.0

-

dB

f = 740 MHz, L1 = 18 nH

[2] -

23.0

-

dB

f = 740 MHz, L1 = 8.2 nH

[2]

23.0

dB

f = 882 MHz, L1 = 8.2 nH

[3] -

22.0

-

dB

ISL

isolation

f = 943 MHz, L1 = 8.2 nH

[4] -

21.5

-

dB

f = 470 MHz, L1 = 18 nH

[1] [6] -

0.85

1.30

dB

f = 650 MHz, L1 = 18 nH

[1] [6] -

0.90

1.35

dB

f = 740 MHz, L1 = 18 nH

[1] [2] [6] -

0.95

1.40

dB

f = 740 MHz, L1 = 8.2 nH

[1] [2] [6]

0.85

1.3

dB

f = 882 MHz, L1 = 8.2 nH

[1] [3] [6] -

0.85

1.3

dB

NF

noise figure

f = 943 MHz, L1 = 8.2 nH

[1] [4] [6] -

0.90

1.35

dB