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BGS8L2 数据表(PDF) 13 Page - NXP Semiconductors |
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BGS8L2 数据表(HTML) 13 Page - NXP Semiconductors |
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13 / 18 page ![]() NXP Semiconductors BGS8L2 SiGe:C Low-noise amplifier MMIC with bypass switch for LTE BGS8L2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved. Product data sheet Rev. 6 — 29 June 2018 COMPANY PUBLIC 13 / 18 13 Application information 13.1 LTE LNA aaa-006409 6 L1 2 1 4 3 RFout RFin Ven Vcc C1 5 IC1 For a list of component, see Table 10. Figure 3. Schematics LTE LNA evaluation board Table 10. List of components For schematics see, Figure 3. Component Description Value Remarks C1 decoupling capacitor 1 μF to suppress power supply noise IC1 BGS8L2 - NXP Semiconductors N.V. 18 nH 460 < f < 728 MHz Murata LQW15A L1 high-quality matching inductor 8.2 nH 728 < f < 960 MHz Murata LQW15A |
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