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BGS8L2 数据表(PDF) 12 Page - NXP Semiconductors |
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BGS8L2 数据表(HTML) 12 Page - NXP Semiconductors |
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12 / 18 page ![]() NXP Semiconductors BGS8L2 SiGe:C Low-noise amplifier MMIC with bypass switch for LTE BGS8L2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved. Product data sheet Rev. 6 — 29 June 2018 COMPANY PUBLIC 12 / 18 Symbol Parameter Conditions Min Typ Max Unit Bypass mode ICC supply current VI(CTRL) < 0.3 V - - 1 μA f = 470 MHz, L1 = 18 nH [1] -3.0 -1.5 0.0 dB f = 650 MHz, L1 = 18 nH [1] -4.0 -2.5 -1.0 dB f = 740 MHz, L1 = 18 nH [1] [2] -4.5 -3.0 -1.5 dB f = 740 MHz, L1 = 8.2 nH [1] [2] -3.1 -1.6 -0.1 dB f = 882 MHz, L1 = 8.2 nH [3] -3.4 -1.9 -0.4 dB Gp power gain f = 943 MHz, L1 = 8.2 nH [1] [4] -3.5 -2.0 -0.5 dB f = 470 MHz, L1 = 18 nH - 13.0 - dB f = 650 MHz, L1 = 18 nH - 7.0 - dB f = 740 MHz, L1 = 18 nH [2] - 5.5 - dB f = 740 MHz, L1 = 8.2 nH [2] - 15.0 - dB f = 882 MHz, L1 = 8.2 nH [3] - 11.5 - dB RLin input return loss f = 943 MHz, L1 = 8.2 nH [4] - 11.0 - dB f = 470 MHz, L1 = 18 nH - 12.0 - dB f = 650 MHz, L1 = 18 nH - 8.0 - dB f = 740 MHz, L1 = 18 nH [2] - 6.5 - dB f = 740 MHz, L1 = 8.2 nH [2] - 13.0 - f = 882 MHz, L1 = 8.2 nH [3] - 11.5 - dB RLout output return loss f = 943 MHz, L1 = 8.2 nH [4] - 11.5 - dB between gain mode and bypass mode f = 470 MHz, L1 = 18 nH - - - deg f = 650 MHz, L1 = 18 nH - - - deg f = 740 MHz, L1 = 18 nH - - - deg f = 740 MHz, L1 = 8.2 nH deg f = 882 MHz, L1 = 8.2 nH [1] -5.0 - +5.0 deg Δφ phase variation f = 943 MHz, L1 = 8.2 nH - - - deg [1] Guaranteed by device design; not tested in production. [2] E-UTRA operating band 17 (734 MHz to 746 MHz). [3] E-UTRA operating band 5 (869 MHz to 894 MHz). [4] E-UTRA operating band 8 (925 MHz to 960 MHz). [5] RLin value can be increased by using a higher value for the series input matching inductor L1. [6] PCB losses are subtracted. |
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