32F030F4P6 datasheet(51/93 Pages) STMICROELECTRONICS

51 / 93 page

DS9773 Rev 4

51/93

STM32F030x4/x6/x8/xC

Electrical characteristics

where

ISW is the current sunk by a switching I/O to charge/discharge the capacitive load

VDDIOx is the I/O supply voltage

fSW is the I/O switching frequency

C is the total capacitance seen by the I/O pin: C = CINT + CEXT + CS

CS is the PCB board capacitance including the pad pin.

The test pin is configured in push-pull output mode and is toggled by software at a fixed

frequency.

6.3.6

Wakeup time from low-power mode

The wakeup times given in Table 30 are the latency between the event and the execution of

the first user instruction. The device goes in low-power mode after the WFE (Wait For

Event) instruction, in the case of a WFI (Wait For Interruption) instruction, 16 CPU cycles

must be added to the following timings due to the interrupt latency in the Cortex M0

architecture.

The SYSCLK clock source setting is kept unchanged after wakeup from Sleep mode.

During wakeup from Stop or Standby mode, SYSCLK takes the default setting: HSI 8 MHz.

The wakeup source from Sleep and Stop mode is an EXTI line configured in event mode.

The wakeup source from Standby mode is the WKUP1 pin (PA0).

All timings are derived from tests performed under the ambient temperature and supply

voltage conditions summarized in Table 21: General operating conditions.

Table 29. Switching output I/O current consumption

Symbol

Parameter

Conditions(1)

1. CS = 7 pF (estimated value).

I/O toggling

frequency (fSW)

Typ

Unit

ISW

I/O current

consumption

VDDIOx = 3.3 V

CEXT = 0 pF

C = CINT + CEXT+ CS

4 MHz

0.18

8 MHz

0.37

16 MHz

0.76

24 MHz

1.39

48 MHz

2.188

VDDIOx = 3.3 V

CEXT = 22 pF

C = CINT + CEXT+ CS

4 MHz

0.49

8 MHz

0.94

16 MHz

2.38

24 MHz

3.99

VDDIOx = 3.3 V

CEXT = 47 pF

C = CINT + CEXT+ CS

C = Cint

4 MHz

0.81

8 MHz

1.7

16 MHz

3.67

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