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PIFE32251B-R47MS 数据表(PDF) 11 Page - Texas Instruments |
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PIFE32251B-R47MS 数据表(HTML) 11 Page - Texas Instruments |
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11 / 96 page ![]() 11 TPS65094 www.ti.com SWCS133C – SEPTEMBER 2015 – REVISED FEBRUARY 2019 Submit Documentation Feedback Product Folder Links: TPS65094 Specifications Copyright © 2015–2019, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Transient for less than 5 ns. (3) Transient for less than 20 ns. 5 Specifications 5.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT ANALOG VSYS Input voltage from battery –0.3 28 V PVIN3, PVIN4, PVIN5, LDO5P0, DRV5V_1_6, DRV5V_2_A1, DRVL1, DRVL2, DRVL6 –0.3 7 V V5ANA –0.3 6 V PGNDSNS1, PGNDSNS2, PGNDSNS6, AGND, FBGND2 –0.3 0.3 V DRVH1, DRVH2, DRVH6, BOOT1, BOOT2, BOOT6 –0.3 34 V SW1, SW2, SW6 –5(2) 28 V LX3, LX4, LX5 –2(3) 8 V BOOTx to SWx Differential voltage –0.3 5.5 V VREF, LDO3P3, FBVOUT1, FBVOUT2, FBVOUT6, FB3, FB4, FB5, ILIM1, ILIM2, ILIM6, PVINVTT, VTT, VTTFB, PVINSWA1, SWA1, PVINSWB1_B2, SWB1, SWB2, LDOA1 –0.3 3.6 V PVINLDOA2_A3, LDOA2, LDOA3 –0.3 3.3 V DIGITAL IOs DATA, CLK, PCH_PWROK, RSMRSTB, GPO –0.3 3.6 V PMICEN, SLP_S4B, SLP_S3B, SLP_S0B, LDOLS_EN, SWA1_EN, THERMTRIPB, IRQB, PROCHOT –0.3 7 V Storage temperature, Tstg –40 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 5.2 ESD Ratings VALUE UNIT VESD Electrostatic discharge Human Body Model (HBM), per ANSI/ESDA/JEDEC JS001(1) ±1000 V Charged Device Model (CDM), per JESD22-C101(2) ±250 |
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