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GD25Q80CSFG 数据表(PDF) 66 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25Q80CSFG 数据表(HTML) 66 Page - GigaDevice Semiconductor (Beijing) Inc. |
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66 / 67 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25Q80C 66 2.4 Modify Icc9 from 400-800uA to 0.6-1.2mA Update the description of all packages Modify the description of the deep-power-current from 1uA to 5uA in “Feature” (Chapter 1), which is a typing error. P44 P50-56 P4 2018-3-5 2.5 Modify tVSL min value from 5ms to 1.8ms Add tRS to the AC Characteristic, of which the min value is 100us Modify tBE1 max value from 0.3/0.7s to 0.8/1.2s (<50K/50-100K cycling) Modify tBE2 max value from 0.5/0.8s to 1.2/2.0s (<50K/50-100K cycling) P42 P46 P46 P46 2018-5-17 2.6 Add 4BH Command Add DC/AC characteristics @-40℃~105℃ Add DC/AC characteristics @-40℃~125℃ Modify Ordering Information P4,13,33 P46/P51 P47/P52 P55 2018-8-28 |
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