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GD25WD05C 数据表(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25WD05C 数据表(HTML) 4 Page - GigaDevice Semiconductor (Beijing) Inc. |
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4 / 43 page ![]() Uniform Sector Standard and Dual Serial Flash GD25WD10C/05C 4 1. FEATURES ◆ 1M/512K-bit Serial Flash ◆ Fast Program/Erase Speed -128K/64K-byte -Page Program time: 1.6ms typical -256 bytes per programmable page -Sector Erase time: 150ms typical -Block Erase time: 0.5/0.8s typical ◆ Standard, Dual Output -Chip Erase time: 1.5/0.8s typical -Standard SPI: SCLK, CS#, SI, SO, WP# -Dual Output: SCLK, CS#, IO0, O1, WP# ◆ Flexible Architecture -Uniform Sector of 4K-byte ◆ Clock Frequency -Uniform Block of 32/64K-byte -100MHz for fast read on 3.0~3.6V power supply ◆ Dual Output Data Transfer up to 160Mbits/s ◆ Low Power Consumption -70MHz for fast read on 2.1~3.0V power supply -0.1uA typical standby current ◆ Dual Output Data Transfer up to 120Mbits/s -0.1uA typical power down current -50MHz for fast read on 1.65~2.1V power supply ◆ Dual Output Data Transfer up to 80Mbits/s ◆ Single Power Supply Voltage -Full voltage range: 1.65~3.6V ◆ Software/Hardware Write Protection -Write protect all/portion of memory via software ◆ Package option -Enable/Disable protection with WP# Pin -SOP8 150mil -SOP8 208mil ◆ Minimum 100,000 Program/Erase Cycles -TSSOP8 173mil -USON8 3*2mm ◆ Data Retention -USON8 1.5*1.5mm -20-year data retention typical |
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