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56F8167 数据表(PDF) 140 Page - Freescale Semiconductor, Inc |
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56F8167 数据表(HTML) 140 Page - Freescale Semiconductor, Inc |
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140 / 184 page ![]() 56F8367 Technical Data, Rev. 7.0 140 Freescale Semiconductor Preliminary 1. Theta-JA determined on 2s2p test boards is frequently lower than would be observed in an application. Determined on 2s2p ther- mal test board. 2. Junction to ambient thermal resistance, Theta-JA (RθJA) was simulated to be equivalent to the JEDEC specification JESD51-2 in a horizontal configuration in natural convection. Theta-JA was also simulated on a thermal test board with two internal planes (2s2p, where “s” is the number of signal layers and “p” is the number of planes) per JESD51-6 and JESD51-7. The correct name for Theta-JA for forced convection or with the non-single layer boards is Theta-JMA. 3. Junction to case thermal resistance, Theta-JC (RθJC ), was simulated to be equivalent to the measured values using the cold plate technique with the cold plate temperature used as the "case" temperature. The basic cold plate measurement technique is described by MIL-STD 883D, Method 1012.1. This is the correct thermal metric to use to calculate thermal performance when the package is being used with a heat sink. 4. Thermal Characterization Parameter, Psi-JT ( Ψ JT ), is the "resistance" from junction to reference point thermocouple on top cen- ter of case as defined in JESD51-2. Ψ JT is a useful value to use to estimate junction temperature in steady-state customer en- vironments. 5. Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. 6. See Part 12.1 for more details on thermal design considerations. 7. TJ = Junction temperature TA = Ambient temperature TBD = numbers will be available late Q4 2005 Table 10-2 56F8367/56F8167 ElectroStatic Discharge (ESD) Protection Characteristic Min Typ Max Unit ESD for Human Body Model (HBM) 2000 — — V ESD for Machine Model (MM) 200 — — V ESD for Charge Device Model (CDM) 500 — — V Table 10-3 Thermal Characteristics6 Characteristic Comments Symbol Value Value Unit Notes 160-pin LQFP 160MAPBGA Junction to ambient Natural convection RθJA 38.5 39.90 °C/W 2 Junction to ambient (@1m/sec) RθJMA 35.4 46.8 °C/W 2 Junction to ambient Natural convection Four layer board (2s2p) RθJMA (2s2p) 33 TBD °C/W 1, 2 Junction to ambient (@1m/sec) Four layer board (2s2p) RθJMA (2s2p) 31.5 TBD °C/W 1, 2 Junction to case RθJC 8.6 TBD °C/W 3 Junction to center of case Ψ JT 0.8 TBD °C/W 4, 5 I/O pin power dissipation P I/O User-determined W Power dissipation P D P D = (IDD x VDD + P I/O)W Maximum allowed PD PDMAX (TJ - TA) / R θJA7 W |
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