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F2000D 数据表(PDF) 2 Page - OSRAM GmbH

部件名 F2000D
功能描述  InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Current and Flux), InGaAlP High Brightness LED (617nm, High Current and Flux)
PDF  6 Pages
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制造商  OSRAM [OSRAM GmbH]
网页  http://www.osram.com
标志 OSRAM - OSRAM GmbH

F2000D 数据表(HTML) 2 Page - OSRAM GmbH

  F2000D Datasheet HTML 1Page - OSRAM GmbH F2000D Datasheet HTML 2Page - OSRAM GmbH F2000D Datasheet HTML 3Page - OSRAM GmbH F2000D Datasheet HTML 4Page - OSRAM GmbH F2000D Datasheet HTML 5Page - OSRAM GmbH F2000D Datasheet HTML 6Page - OSRAM GmbH  
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2003-04-15
2
F 2000D
Elektrische Werte (
T
A = 25 °C)
Electrical values
1) (T
A = 25 °C)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
2)
Einheit
Unit
min.
typ.
max.
Dominantwellenlänge
Dominant wavelength
I
F = 400 mA, tp = 1.8 ms
λ
dom
613
623
nm
Sperrspannung
Reverse voltage
I
R = 1µA
V
R
12
V
Durchla
βspannung
Forward voltage
I
F = 400 mA, tp = 1.8 ms
V
F
2.6
V
Lichtstrom
Luminous Flux
3)
I
F = 400 mA, tp = 1.8 ms
Φ
V
8000
mlm
1)
Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and fragment
of a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (rings). Sample chips are
picked from each foil and placed on a special carrier for measurement purposes.
Sample-test: Sampling density/samples per cm² (grid): 1,6/cm².
If a sample fails, the distance area to the next non-failure samples is manually removed by a vacuum tool.
All el. values are referenced to the vendor's measurement system (correlation to customer product(s) is required)
2)
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
3)
Luminous flux is measured in integrating sphere



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