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F2000D 数据表(PDF) 3 Page - OSRAM GmbH

部件名 F2000D
功能描述  InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Current and Flux), InGaAlP High Brightness LED (617nm, High Current and Flux)
PDF  6 Pages
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制造商  OSRAM [OSRAM GmbH]
网页  http://www.osram.com
标志 OSRAM - OSRAM GmbH

F2000D 数据表(HTML) 3 Page - OSRAM GmbH

  F2000D Datasheet HTML 1Page - OSRAM GmbH F2000D Datasheet HTML 2Page - OSRAM GmbH F2000D Datasheet HTML 3Page - OSRAM GmbH F2000D Datasheet HTML 4Page - OSRAM GmbH F2000D Datasheet HTML 5Page - OSRAM GmbH F2000D Datasheet HTML 6Page - OSRAM GmbH  
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F 2000D
2003-04-15
3
Mechanische Werte
Mechanical values
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
1)
Einheit
Unit
min.
typ.
max.
Chipkantenlänge (x-Richtung)
Length of chip edge (x-direction)
L
x
0.68
0.7
0.72
mm
Chipkantenlänge (y-Richtung)
Length of chip edge (y-direction)
L
y
0.68
0.7
0.72
mm
Durchmesser des Wafers
Diameter of the wafer
D
100
mm
Chiphöhe
Die height
H
200
220
240
µm
Bondpaddurchmesser
Diameter of bondpad
d
110
120
130
µm
Weitere Informationen
Additional information
2)
Vorderseitenmetallisierung
Metallization frontside
Aluminium
Aluminum
Rückseitenmetallisierung
Metallization backside
Goldlegierung
Gold alloy
Trennverfahren
Dicing
Sägen
Sawing
Verbindung Chip - Träger
Die bonding
Kleben
Epoxy bonding
1)
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
2)
All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection
A63501-Q0013-N001-*-76G3:
The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.The
visual inspection of chip backside is performed with stereo microscope with incident light with 40x-80x magnification.
Areas > ¼ cm² which have an amount of more than 3% failed dies will be removed. The visual inspection of chip
frontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area of
each wafer. Areas > 1 cm² which have an amount of more than 50% failed dies and areas > 2 cm² which have an
amount of more than 25% failed dies will be removed. In areas with failure density higher than 1% each failure die is
inked individually. On request the visual inspection of chip frontside can be performed by an automated visual
inspection combined with automated inking additionally. The quality inspection (final visual inspection) is performed
by production. An additional visual inspection step as special release procedure by QM after the final visual inspection
is not installed.



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