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STM32MP151AAB3 数据表(PDF) 186 Page - STMicroelectronics |
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STM32MP151AAB3 数据表(HTML) 186 Page - STMicroelectronics |
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186 / 253 page  Electrical characteristics STM32MP151A/D 186/253 DS12500 Rev 3 Figure 35. NAND controller waveforms for common memory read access Figure 36. NAND controller waveforms for common memory write access MS32769V1 FMC_NWE FMC_NOE FMC_D[15:0] tw(NOE) tsu(D-NOE) th(NOE-D) ALE (FMC_A17) CLE (FMC_A16) FMC_NCEx td(ALE-NOE) th(NOE-ALE) MS32770V1 tw(NWE) th(NWE-D) tv(NWE-D) FMC_NWE FMC_N OE FMC_D[15:0] td(D-NWE) ALE (FMC_A17) CLE (FMC_A16) FMC_NCEx td(ALE-NOE) th(NOE-ALE) Table 69. Switching characteristics for NAND Flash read cycles(1) Symbol Parameter Min Max Unit tw(N0E) FMC_NOE low width 4Tfmc_ker_ck-1 4Tfmc_ker_ck+1 ns tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high 11 - th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 0 - td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 2Tfmc_ker_ck+1 th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 3Tfmc_ker_ck+0.5 - 1. Guaranteed by characterization results. |
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