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AS29F040 数据表(PDF) 16 Page - Alliance Semiconductor Corporation

部件名 AS29F040
功能描述  5V 512K x 8 CMOS FLASH EEPROM
PDF  18 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS29F040 数据表(HTML) 16 Page - Alliance Semiconductor Corporation

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NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at a time.
Parameter
Limits
Unit
Min
Typical
Max
Sector erase and verify-1 time (excludes 00h programming prior to erase)
-
1.0
-
sec
Byte program time
-
45
-
µs
Chip programming time
-
23
-sec
Erase/program cycles
-
-
10,000
cycles
Parameter
Min
Max
Unit
Input voltage with respect to VSS on A9 and OE
-1.0
+13.0
V
Input voltage with respect to VSS on all DQ, address and control pins
-1.0
VCC+1.0
V
Current
-100
+100
mA
Parameter
Symbol
Min
Max
Unit
Input voltage (Input or DQ pin)
VIN
–2.0
+7.0
V
Input voltage (A9 pin, OE)VIN
–2.0
+13.0
V
Power supply voltage
VCC
-0.5
+5.5
V
Operating temperature
TOPR
–55
+125
°C
Storage temperature (plastic)
TSTG
–65
+125
°C
Short circuit output current
IOUT
-200
mA
100 pF*
Device under Test
*including scope
and jig capacitance
VSS
Test condition
Unit
Output load
1 TTL gate
Input rise and fall times
5
ns
Input pulse levels
0.0-3.0
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5



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