AS29F040 datasheet(1/18 Pages) ALSC

部件名	AS29F040

功能描述	5V 512K x 8 CMOS FLASH EEPROM

PDF	18 Pages

Scroll/Zoom	100%

制造商	ALSC [Alliance Semiconductor Corporation]

网页	https://www.alliancememory.com

标志

1 / 18 page

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• Organization:512K words × 8 bits

• Industrial and commercial temperature

• Sector architecture

- Eight 64K byte sectors

- Erase any combination of sectors or full chip

• Single 5.0±0.5V power supply for read/write operations

• Sector protection

• High speed 55/70/90/120/150 ns address access time

• Automated on-chip programming algorithm

- Automatically programs/verifies data at specified

address

• Automated on-chip erase algorithm

- Automatically preprograms/erases chip or specified

sectors

• 10,000 write/erase cycle endurance

• Low power consumption

- 30 mA maximum read current

- 60 mA maximum program current

- 400 µA typical standby current

• JEDEC standard software, packages and pinouts

- 32-pin TSOP

- 32-pin PLCC

• Detection of program/erase cycle completion

-DQ7 DATA polling

- DQ6 toggle bit

• Erase suspend/resume

- Supports reading data from or programming data to

a sector not being erased

• Low VCC write lock-out below 2.8V

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X decoder

VCC

VSS

Cell matr

Y decoder

Y gating

Data latch

Chip enable

Input/output

buffers

Sector protect

Command

register

Program/erase

control

VCC detector

Erase voltage

generator

Program voltage

generator

Timer

A0–A18

CE

OE

STB

Output enable

Logic

WE

DQ0–DQ7

switches

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VCC

WE

A17

A14

A13

A8

A9

A11

OE

A10

CE

DQ7

DQ6

DQ5

A18

A16

A15

A12

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

DQ1

DQ2

VSS

DQ4

DQ3

1

2

3

4

5

6

7

8

9

10

11

12

13

14

32

31

30

29

28

27

26

25

24

23

22

21

20

19

15

16

18

17

32-pin TSOP

32-pin PLCC

1

232

31

30

43

29

28

27

26

25

24

23

21

A7

A6

A5

A4

A3

A2

A1

DQ0

VSS

DQ4

DQ6

DQ1

22

5

6

7

8

9

10

11

13

12

17

16

18

19

20

14

15

DQ2

DQ3

DQ5

A0

A14

A13

A8

A9

A11

OE

A10

DQ7

CE

A16

VCC

A17

A12

A15

A18

WE

AS29F040

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AS29F040-55

AS29F040-70

AS29F040-90

AS29F040-120 AS29F040-150 Unit

Maximum access time

tAA 55

70

90

120

150

ns

Maximum chip enable access time

tCE 55

70

90

120

150

ns

Maximum output enable access time

tOE 25

30

35

50

55

ns

类似零件编号 - AS29F040

制造商	部件名	数据表	功能描述
Austin Semiconductor	AS29F040	1Mb / 27P	512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
Micross Components	AS29F040	598Kb / 27P	Sector protection
Austin Semiconductor	AS29F040CW-120/883C	1Mb / 27P	512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
	AS29F040CW-120/IT	1Mb / 27P	512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
	AS29F040CW-120/Q	1Mb / 27P	512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY

More results

类似说明 - AS29F040

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	TC58FVT004	1Mb / 26P	4M (512K x 8) BIT CMOS FLASH MEMORY
Winbond	W29C040	261Kb / 20P	512K X 8 CMOS FLASH MEMORY
ATMEL Corporation	AT49BV8192	148Kb / 13P	8-Megabit 512K x 16 CMOS Flash Memory
fujitsu semiconductor	MBM29F040A-12	715Kb / 18P	FLASH MEMORY CMOS 4M 512K X 8 BIT
Intel Corporation	AN28F512	1Mb / 24P	512K (64K x 8) CMOS FLASH MEMORY
Alliance Semiconductor ...	AS29F010	175Kb / 10P	5V 128K x 8 CMOS FLASH EEPROM
Alliance Semiconductor ...	AS29F200	375Kb / 20P	5V 256K x 8/128K x 8 CMOS FLASH EEPROM
Austin Semiconductor	AS8E512K8	157Kb / 13P	512K x 8 EEPROM EEPROM Module
Austin Semiconductor	AS8E512K8	150Kb / 13P	512K x 8 EEPROM EEPROM Module
Alliance Semiconductor ...	AS29LV400	227Kb / 25P	3V 512K x 8/256K 횞 16 CMOS Flash EEPROM