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STM32H747AI 数据表(PDF) 116 Page - STMicroelectronics

部件名 STM32H747AI
功能描述  Dual 32-bit Arm® Cortex®-M7 up to 480MHz and -M4 MCUs, up to 2MB Flash, 1MB RAM, 46 com. and analog interfaces, SMPS, DSI
PDF  252 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32H747AI 数据表(HTML) 116 Page - STMicroelectronics

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Electrical characteristics
STM32H747xI/G
106/242
DS12930 Rev 1
6.3.5
Embedded reset and power control block characteristics
The parameters given in Table 28 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 22: General operating
conditions.
Table 28. Reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tRSTTEMPO(1)
Reset temporization
after BOR0 released
-
-
377
-
µs
VBOR0
Brown-out reset threshold 0
Rising edge(1)
1.62
1.67
1.71
V
Falling edge
1.58
1.62
1.68
VBOR1
Brown-out reset threshold 1
Rising edge
2.04
2.10
2.15
Falling edge
1.95
2.00
2.06
VBOR2
Brown-out reset threshold 2
Rising edge
2.34
2.41
2.47
Falling edge
2.25
2.31
2.37
VBOR3
Brown-out reset threshold 3
Rising edge
2.63
2.70
2.78
Falling edge
2.54
2.61
2.68
VPVD0
Programmable Voltage
Detector threshold 0
Rising edge
1.90
1.96
2.01
Falling edge
1.81
1.86
1.91
VPVD1
Programmable Voltage
Detector threshold 1
Rising edge
2.05
2.10
2.16
Falling edge
1.96
2.01
2.06
VPVD2
Programmable Voltage
Detector threshold 2
Rising edge
2.19
2.26
2.32
Falling edge
2.10
2.15
2.21
VPVD3
Programmable Voltage
Detector threshold 3
Rising edge
2.35
2.41
2.47
Falling edge
2.25
2.31
2.37
VPVD4
Programmable Voltage
Detector threshold 4
Rising edge
2.49
2.56
2.62
Falling edge
2.39
2.45
2.51
VPVD5
Programmable Voltage
Detector threshold 5
Rising edge
2.64
2.71
2.78
Falling edge
2.55
2.61
2.68
VPVD6
Programmable Voltage
Detector threshold 6
Rising edge
2.78
2.86
2.94
Falling edge in Run mode
2.69
2.76
2.83
Vhyst_BOR_PVD
Hysteresis voltage of BOR
(unless BOR0) and PVD
Hysteresis in Run mode
-
100
-
mV
IDD_BOR_PVD(1)
BOR(2) (unless BOR0) and
PVD consumption from VDD
-
-
0.630
µA



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