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STM32H747AI 数据表(PDF) 151 Page - STMicroelectronics |
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STM32H747AI 数据表(HTML) 151 Page - STMicroelectronics |
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151 / 252 page  DS12930 Rev 1 141/242 STM32H747xI/G Electrical characteristics 221 6.3.14 Memory characteristics Flash memory The characteristics are given at TJ = –40 to 125 °C unless otherwise specified. The devices are shipped to customers with the Flash memory erased. tWAKEUP Startup delay CEXT = 2.2 µF - 80 - µs CEXT = 3.3 µF - - 160 IINRUSH Inrush current on VDDDSI External capacitor load at start - 60 250 mA 1. Based on test during characterization. 2. CEXT recommended value is 2.2 μF to achieve a better dynamic performance of the regulator. A 1 μF capacitor can be used only if the minimum value does not drop below 0.5 μF. Table 62. DSI regulator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 63. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Write / Erase 8-bit mode - 6.5 - mA Write / Erase 16-bit mode - 11.5 - Write / Erase 32-bit mode - 20 - Write / Erase 64-bit mode - 35 - Table 64. Flash memory programming (single bank configuration nDBANK=1) Symbol Parameter Conditions Min(1) Typ Max(1) Unit tprog Word (266 bits) programming time Program/erase parallelism x 8 - 290 580(2) µs Program/erase parallelism x 16 - 180 360 Program/erase parallelism x 32 - 130 260 Program/erase parallelism x 64 - 100 200 tERASE128KB Sector (128 KB) erase time Program/erase parallelism x 8 - 2 4 s Program/erase parallelism x 16 - 1.8 3.6 Program/erase parallelism x 32 - tME Mass erase time Program/erase parallelism x 8 - 13 26 Program/erase parallelism x 16 - 8 16 Program/erase parallelism x 32 - 6 12 Program/erase parallelism x 64 - 5 10 |
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