Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Equivalent input noise voltage density

f = 1 kHz

50

nV/√Hz

f = 10 kHz

50

Voltage noise

f = 0.1 to 10 Hz

0.6

µVpp

Channel separation

f = 1 kHz

120

dB

Initialization time, G = 100 (4)

T = 25 °C

60

µs

-40 °C < T< 125 °C

100

1. See Section 5.5 Input offset voltage drift over temperature. Input offset measurements are performed on

x100 gain configuration. The amplifiers and the gain setting resistors are at the same temperature.

2. Guaranteed by design.

3. Slew rate value is calculated as the average between positive and negative slew rates.

4. Initialization time is defined as the delay between the moment when supply voltage exceeds 2.2 V and

output voltage stabilization

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

Input offset voltage

T = 25 °C

2

30

µV

-40 °C < T< 125 °C

40

Input offset voltage drift (1)

-40 °C < T< 125 °C

0.1

µV/°C

T = 25 °C

30

200 (2)

pA

-40 °C < T< 125 °C

300 (2)

T = 25 °C

60

400 (2)

-40 °C < T< 125 °C

600 (2)

CMR1

T = 25 °C

104

120

dB

-40 °C < T< 125 °C

102

CMR2

T = 25 °C

106

132

-40 °C < T< 125 °C

106

T = 25 °C

120

138

-40 °C < T< 125 °C

110

T = 25 °C

16

40

mV

-40 °C < T< 125 °C

70

Low-level output voltage

T = 25 °C

11

30

-40 °C < T< 125 °C

70

TSZ181, TSZ182

Electrical characteristics

DS11863 - Rev 5

page 5/43