| 数据搜索系统,热门电子元器件搜索 |
|
TSZ181ILT 数据表(PDF) 8 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
TSZ181ILT 数据表(HTML) 8 Page - STMicroelectronics |
|
8 / 43 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit Cs Channel separation f = 100 Hz 135 dB tinit Initialization time, G = 100 (5) T = 25 °C 60 µs -40 °C < T< 125 °C 100 1. See Section 5.5 Input offset voltage drift over temperature. Input offset measurements are performed on x100 gain configuration. The amplifiers and the gain setting resistors are at the same temperature. 2. Guaranteed by design 3. Tested on the MiniSO8 package, RF injection on the IN- pin 4. Slew rate value is calculated as the average between positive and negative slew rates 5. Initialization time is defined as the delay between the moment when supply voltage exceeds 2.2 V and output voltage stabilization TSZ181, TSZ182 Electrical characteristics DS11863 - Rev 5 page 8/43 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |