RRL035P03 datasheet(4/9 Pages) VBSEMI

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

0.7

0.9

1.1

1.3

1.5

- 50

- 25

100

125

150

VGS = - 2.5 V;

ID =- 4.4 A

VGS =- 4.5 V; ID =- 5 A

J - Junction Temperature (°C)

0.02

0.04

0.06

0.08

0.10

123

ID =- 5 A

TJ =25 °C

TJ = 125 °C

GS - Gate-to-Source Voltage (V)

0.001

0.01

0.1

Time (s)

Source-Drain Diode Forward Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

0.1

100

00.5

1.0

TJ = 25 °C

TJ = 150 °C

SD - Source-to-Drain Voltage (V)

0.30

0.45

0.60

0.75

0.90

- 50

- 25

100

125

150

ID = - 250 μA

J - Temperature (°C)

100

0.1

100

0.01

0.1

TA =25 °C

Single Pulse

1s,10s

Limited by RDS(on)*

BVDSS Limited

1ms

100 μs

10 ms

100 ms

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

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RRL035P03

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