RRL035P03 datasheet(1/9 Pages) VBSEMI

部件名	RRL035P03

功能描述	P-Channel 20 V (D-S) MOSFET

PDF	9 Pages

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制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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P-Channel 20 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch for Portable Devices

- Cellular Phone

- DSC

- Portable Game Console

- MP3

- GPS

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

a

Qg (Typ.)

- 20

0.041 at VGS = - 4.5 V

- 4

12.5 nC

0.054 at VGS = - 2.5 V

- 4

0.100 at VGS = - 1.8 V

- 4

SOT-363

SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

D

G

D

S

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 4a

A

TC = 70 °C

- 4

TA = 25 °C

- 4a, b, c

TA = 70 °C

- 4a, b, c

Pulsed Drain Current (t = 300 µs)

IDM

- 25

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 2.3

TA = 25 °C

- 1.3b, c

Maximum Power Dissipation

TC = 25 °C

PD

2.8

W

TC = 70 °C

1.8

TA = 25 °C

1.6b, c

TA = 70 °C

1.0b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

 5 s

RthJA

60

80

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

34

45

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RRL035P03

1

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