RRL035P03 datasheet(2/9 Pages) VBSEMI

2 / 9 page

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 20

VDS Temperature Coefficient

V

DS/TJ

ID = - 250 µA

- 11

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

2.6

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.4

- 1

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 10 V

± 8

µA

VDS = 0 V, VGS = ± 4.5 V

± 1

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS - 5 V, VGS = - 10 V

- 15

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 5 A

0.034

0.041



VGS = - 2.5 V, ID = - 4.4 A

0.045

0.054

VGS = - 1.8 V, ID = - 1 A

0.067

0.100

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 5 A

Dynamicb

Total Gate Charge

VDS = - 10 V, VGS = - 8 V, ID = - 5 A

Gate-Source Charge

VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A

12.5

Qgs

1.8

Gate-Drain Charge

Qgd

3.3

Gate Resistance

f = 1 MHz

0.08

0.43

0.86



Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 1.4 

ID  - 4 A, VGEN = - 4.5 V, Rg = 1 

150

225

Rise Time

300

450

Turn-Off Delay Time

td(off)

1620

2430

Fall Time

560

840

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 1.4 

ID  - 4 A, VGEN = - 10 V, Rg = 1 

100

Rise Time

180

Turn-Off Delay Time

td(off)

2500

3750

Fall Time

600

900

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

- 2.3

Pulse Diode Forward Current

ISM

- 25

Body Diode Voltage

VSD

IS = - 4 A, VGS = 0 V

- 0.85

- 1.2

Body Diode Reverse Recovery Time

trr

IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C

Body Diode Reverse Recovery Charge

Qrr

816

Reverse Recovery Fall Time

Reverse Recovery Rise Time

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RRL035P03

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