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RRL035P03 数据表(PDF) 3 Page - VBsemi Electronics Co.,Ltd |
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RRL035P03 数据表(HTML) 3 Page - VBsemi Electronics Co.,Ltd |
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3 / 9 page ![]() TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Current vs. Gate-Source Voltage Output Characteristics On-Resistance vs. Drain Current 0369 12 15 V GS - Gate-Source Voltage (V) 0 0.02 0.04 0.06 0.08 0.1 0 5 10 15 20 25 00.5 1.0 1.5 2.0 2.5 VGS =5Vthru3V VGS =2.5 V VGS =1.5 V VGS =2V V DS - Drain-to-Source Voltage (V) 0 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 VGS =2.5 V VGS =1.8 V VGS =4.5 V I D - Drain Current (A) Gate Current vs. Gate-Source Voltage Transfer Characteristics Gate Charge 0369 12 15 V GS - Gate-Source Voltage (V) 10 -10 10-9 10-8 10-6 10-4 10-7 10-5 T J = 25 °C T J = 150 °C 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 TC = - 55 °C TC = 125 °C TC = 25 °C V GS - Gate-to-Source Voltage (V) 0 2 4 6 8 0 5 10 15 20 25 ID =5A VDS =5V VDS =10V VDS =16V Q g - Total Gate Charge (nC) E-mail:China@VBsemi TEL:86-755-83251052 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RRL035P03 3 |
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