GaAs, pHEMT, MMIC, Single Positive Supply,

DC to 10 GHz Power Amplifier

Data Sheet

ADPA9002

Rev. 0

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FEATURES

OP1dB: 29 dBm typical

Gain: up to 15 dB typical

OIP3: up to 43 dBm typical

50 Ω matched input/output

32-lead, 5 mm × 5 mm LFCSP

APPLICATIONS

Military and space

Test instrumentation

FUNCTIONAL BLOCK DIAGRAM

17

1

3

4

2

GND

NIC

NIC

GND

5

6

RFIN

GND

7

NIC

8

GND

GND

PACKAGE

BASE

GND

18 NIC

19 NIC

20 GND

22 GND

23 NIC

24 GND

ADPA9002

Figure 1.

GENERAL DESCRIPTION

The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic

high electron mobility transistor (pHEMT), monolithic

microwave integrated circuit (MMIC), power amplifier that

operates between dc and 10 GHz. The amplifier provides 15 dB

of gain, 42 dBm of OIP3, and 31.5 dBm of saturated output

ADPA9002 is self biased in normal operation and has an

adjustment. The amplifier is ideal for military and space and

test equipment applications. The ADPA9002 also features inputs

and outputs that are internally matched to 50 Ω, housed in a

RoHS compliant, 5 mm × 5 mm LFCSP premolded cavity

package, making it compatible with high volume surface-mount

technology (SMT) assembly equipment.

Note that throughout this data sheet, multifunction pins, such

function is relevant.