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ADPA9002ACGZN-R7 数据表(PDF) 17 Page - Analog Devices |
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ADPA9002ACGZN-R7 数据表(HTML) 17 Page - Analog Devices |
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17 / 19 page ![]() Data Sheet ADPA9002 Rev. 0 | Page 17 of 19 THEORY OF OPERATION The ADPA9002 is a GaAs, MMIC, pHEMT, cascode distributed power amplifier. The cascode distributed architecture of the ADPA9002 uses a fundamental cell consisting of a stack of two field effect transistors (FETs) with the source of the upper FET connected to the drain of the lower FET. The fundamental cell is then duplicated several times with an RFIN transmission line interconnecting the gates of the lower FETs and an RFOUT transmission line interconnecting the drains of the upper FETs. ACG2 RFOUT/ VDD ACG1 ACG3 VGG1 RFIN Figure 61. Simplified Schematic of the Cascode Distributed Amplifier Additional circuit design techniques are used around each cell to optimize the overall bandwidth, output power, and noise figure. The major benefit of this architecture is that a high output level is maintained across a bandwidth far greater than a single instance of the fundamental cell provides. A simplified schematic of this architecture is shown in Figure 61. For simplified biasing without the need for a negative voltage rail, VGG1 can be connected directly to GND. With VDD = 12 V and VGG1 grounded, a quiescent drain current of 385 mA (typical) results. An externally generated VGG1 can optionally be applied, allowing adjustment of the quiescent drain current above and below the 385 mA nominal. As an example, Figure 52 shows that, by adjusting VGG1 from approximately −0.3 V to +0.3 V, quiescent drain currents from 250 mA to 450 mA can be obtained. The ADPA9002 has single-ended input and output ports whose impedances are nominally equal to 50 Ω over the dc to 10 GHz frequency range. Consequently, the ADPA9002 can be directly inserted into a 50 Ω system with no required impedance matching circuitry. Similarly, the input and output impedances are sufficiently stable across variations in temperature and supply voltage so that no impedance matching compensation is required. The RF output port additionally functions as the VDD bias, requiring an RF choke through which dc bias is applied. Though the device operates down to dc, blocking capacitors are recommended at the RF input and output ports to prevent damages on the RF stages when loading the dc bias supplies. The RF choke and blocking capacitor at the RF output together constitute a bias tee. In practice, the external RF choke and dc blocking capacitor selections limit the lowest frequency of operation. ACG1 through ACG3 are nodes at which ac terminations (capacitors) to ground can be provided. The use of such terminations serves to roll off the gain at frequencies below 200 MHz, allowing the flattest possible gain response to be obtained over various frequencies. It is critical to supply low inductance ground connections to the GND pins and to the package base exposed pad to ensure stable operation. To achieve optimal performance from the ADPA9002 and to prevent damage to the device, do not exceed the absolute maximum ratings. |
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