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AS4LC2M8S1 数据表(PDF) 13 Page - Alliance Semiconductor Corporation |
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AS4LC2M8S1 数据表(HTML) 13 Page - Alliance Semiconductor Corporation |
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13 / 28 page  AS4LC2M8S1 AS4LC1M16S1 7/5/00 ALLIANCE SEMICONDUCTOR 13 Read—DQM operation* * For this example, the burst length = 4, and the CAS latency = 2. † A8 and A9 = “Don’t care.” ƒ DQM represents DQML and DQMH. DQML controls the lower byte, and DQMH controls the upper byte. Write—DQM operation* * For this example, the burst length = 4. † A8 and A9 = “Don’t care.” ƒ DQM represents DQML and DQMH. DQML controls the lower byte, and DQMH controls the upper byte. CLK CKE COMMAND DQMƒ A0–A9 A10 T0 T1 T4 T2 T6 T7 T8 tCH tCL tCK *†ƒ tCKS tCKH NOP tCMH tCMS READ NOP NOP NOP NOP T3 T5 BA DQ tCL tCMS tCMH ACTIVE tAH tAS ROW tAH tAS ROW tAH tAS BANK Column m (A0-A7)3 ENABLE AUTOPRECHARGE DISABLE AUTOPRECHARGE BANK tRCD CAS latency tAC *†ƒ tLZ tOH tHZ tLZ DOUT m+2 tAC *†ƒ DOUT m+3 tAC *†ƒ tOH tDQZ tOH tHZ DOUT m ROW NOP NOP CLK CKE COMMAND DQMƒ A0–A9 A10 T0 T1 T4 T2 T6 tCH tCK *†ƒ tCKS tCKH NOP NOP tCMH tCMS WRITE NOP NOP NOP NOP T3 T5 BA DQ tCL tCMS tCMH ACTIVE tAH tAS ROW tAH tAS ROW tAH tAS BANK Column m (A0-A7)† ENABLE AUTOPRECHARGE DISABLE AUTOPRECHARGE BANK tRCD T7 DIN m DIN m+2 DIN m+3 tDS tDH tDS tDH tDS tDH |
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