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AS4LC2M8S1 数据表(PDF) 7 Page - Alliance Semiconductor Corporation

部件名 AS4LC2M8S1
功能描述  3.3V 2M x 8/1M x 16 CMOS synchronous DRAM
PDF  28 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS4LC2M8S1 数据表(HTML) 7 Page - Alliance Semiconductor Corporation

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AS4LC2M8S1
AS4LC1M16S1
7/5/00
ALLIANCE SEMICONDUCTOR
7
DC electrical characteristics
CL = CAS latency.
Parameter
Symbol
Test conditions
–7
–8
–10
Unit Notes
MinMax MinMax MinMax
Input leakage current
IIL
0V
V
IN VCC,
Pins not under test = 0V
–5
+5
–5
+5
–5
+5
µA
Output leakage
current
IOL
DOUT disabled, 0V VOUT VCCQ
–10 +10 –10 +10 –10 +10 µA
Operating current
(one bank active)
ICC1
tRC min, IO = 0mA,
burst length = 1
–140
–100
–100 mA
1,3,
4,5
Precharge standby
current (power
down mode)
ICC2P
CKE
V
IL(max), tCK = 15 ns
2.0
2.0
2.0
mA
ICC2PS
CKE and CLK
V
IL(max), tCK =
–2.0
2.0
–2.0
mA
Precharge standby
current (non-power-
down mode)
ICC2N
CS
V
IH(min), CKE VIH(min),
tCK = 15 ns; input signals changed
once during 30 ns
–30–30
–30
mA 1,2,3
ICC2NS
CLK
V
IL(max), CKE VIH(min),
tCK = ; input signals stable
–6–
6
–6
mA 1,2,3
Active standby
current (power-
down mode)
ICC3P
CKE
V
IL(max), tCK = 15 ns
2
2
2
mA 1,2,3
ICC3PS
CLK, CKE
V
IL(max), tCK =
–2–
2
–2
mA 1,2,3
Active standby
current (non-power-
down mode, one
bank active)
ICC3N
CKE
V
IH(min), CS VIH(min),
tCK = 15 ns; input signals changed
once during 30 ns
–35–35
–35
mA 1,2,3
ICC3NS
CKE
V
IH(min), CLK VIL(max),
tCK = ; input signals stable
–10–10
–10
mA 1,2,3
Operating current
(burst mode)
ICC4
IO = 0 mA
Page burst
All banks activated
tCCD = tCCD(min)
CL =3
140
130
120
mA
1,2,
3,5
CL =2
125
115
100
CL =1
80
70
70
Refresh current
ICC5
tRC tRC(min)
80
70
70
mA
1,2,
3,5
Self refresh current
ICC6
CKE
0.2 V
2–
2–2
mA
1–
1–1
mA
15



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