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ADPA7009CHIP 数据表(PDF) 18 Page - Analog Devices

部件名 ADPA7009CHIP
功能描述  20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier
PDF  28 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADPA7009CHIP 数据表(HTML) 18 Page - Analog Devices

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ADPA7009CHIP
Data Sheet
Rev. 0 | Page 18 of 28
THEORY OF OPERATION
The architecture of the ADPA7009CHIP, a medium power
amplifier, is shown in Figure 65. The ADPA7009CHIP uses a
cascaded, four-stage amplifier operating in quadrature between
two 90° hybrids.
The input signal is divided evenly in two. Each path is amplified
through four independent gain stages. The amplified signals are
then combined at the output. This balanced amplifier approach
forms an amplifier with a combined gain of 19.5 dB and a PSAT
value of 29 dBm. The gate pins are internally connected and
can be biased from either north or south of the circuit.
A portion of the RF output signal is directionally coupled to a
diode for detection of the RF output power. When the diode is
dc biased, the diode rectifies the RF power and makes the RF
power available for measurement as a dc voltage at VDET. To
allow temperature compensation of VDET, an identical and
symmetrically located circuit, minus the coupled RF power, is
available via VREF. Taking the difference of VREF − VDET
provides a temperature compensated signal that is proportional
to the RF output (see Figure 65).
VDD2 VDD4
RFOUT
VREF
DIRECTIONAL
COUPLER
VGG1 VGG2
VDD1
VDD3
RFIN
VDET
Figure 65. ADPA7009CHIP Architecture



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