20 GHz to 54 GHz, GaAs, pHEMT, MMIC,

29 dBm (0.5 W) Power Amplifier

Data Sheet

ADPA7009CHIP

Rev. 0

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FEATURES

Output P1dB: 28.5 dBm typical at 24 GHz to 36 GHz

Gain: 19.5 dB typical at 24 GHz to 36 GHz

Input return loss: 17.5 dB typical at 24 GHz to 36 GHz

Output return loss: 22.0 dB typical at 24 GHz to 36 GHz

Output IP3: 35 dBm typical at 24 GHz to 36 GHz

Supply voltage: 5 V typical at 750 mA

50 Ω matched input and output

Die size: 2.750 mm × 1.845 mm× 0.102 mm

APPLICATIONS

Military and space

Test instrumentation

Satellite communications

FUNCTIONAL BLOCK DIAGRAM

VREF

5

4

3

2

RFIN

1

10

9

8

7

RFOUT

6

ADPA7009CHIP

Figure 1.

GENERAL DESCRIPTION

The ADPA7009CHIP is a gallium arsenide (GaAs),

pseudomorphic high electron mobility transistor (pHEMT),

monolithic microwave integrated circuit (MMIC), 29 dBm

saturated output power (0.5 W) distributed power amplifier that

operates from 20 GHz to 54 GHz. The amplifier provides a gain

of 19.5 dB, an output power for 1 dB compression (P1dB) of

28.5 dBm, and a typical output third-order intercept (IP3) of

35 dBm at 24 GHz to 36 GHz. The ADPA7009CHIP requires

outputs that are internally matched to 50 Ω, facilitating

integration into multichip modules (MCMs). All data is taken

with the RFIN and RFOUT pads connected via one 0.076 mm

(3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.