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ADRF5024BCCZN-R7 数据表(PDF) 4 Page - Analog Devices |
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ADRF5024BCCZN-R7 数据表(HTML) 4 Page - Analog Devices |
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4 / 13 page ![]() ADRF5024 Data Sheet Rev. C | Page 4 of 13 Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT LINEARITY1 200 MHz to 40 GHz 1 dB Power Compression P1dB 27.5 dBm Third-Order Intercept IP3 Two tone input power = 12 dBm each tone, Δf = 1 MHz 50 dBm SUPPLY CURRENT VDD and VSS pins Positive Supply Current IDD 14 μA Negative Supply Current ISS 120 μA DIGITAL CONTROL INPUTS CTRL pin Voltage Low VINL 0 0.8 V High VINH 1.2 3.3 V Current Low and High IINL, IINH <1 μA RECOMMENDED OPERATING CONDITONS Supply Voltage Positive VDD 3.15 3.45 V Negative VSS −3.45 −3.15 V Digital Control Voltage VCTRL 0 VDD V RF Input Power2 PIN f = 200 MHz to 40 GHz, TCASE = 85°C3 Through Path RF signal is applied to RFC or through connected RF1/RF2 27 dBm Hot Switching RF signal is present at RFC while switching between RF1 and RF2 27 dBm Case Temperature TCASE −40 +105 °C 1 For input linearity performance over frequency, see Figure 13 to Figure 16. 2 For power derating over frequency, see Figure 2 and Figure 3. 3 For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 3 dB. |
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