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ADRF5024BCCZN-R7 数据表(PDF) 4 Page - Analog Devices

部件名 ADRF5024BCCZN-R7
功能描述  Silicon SPDT Switch, Reflective, 100 MHz to 44 GHz
PDF  13 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5024BCCZN-R7 数据表(HTML) 4 Page - Analog Devices

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ADRF5024
Data Sheet
Rev. C | Page 4 of 13
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT LINEARITY1
200 MHz to 40 GHz
1 dB Power Compression
P1dB
27.5
dBm
Third-Order Intercept
IP3
Two tone input power = 12 dBm each tone,
Δf = 1 MHz
50
dBm
SUPPLY CURRENT
VDD and VSS pins
Positive Supply Current
IDD
14
μA
Negative Supply Current
ISS
120
μA
DIGITAL CONTROL INPUTS
CTRL pin
Voltage
Low
VINL
0
0.8
V
High
VINH
1.2
3.3
V
Current
Low and High
IINL, IINH
<1
μA
RECOMMENDED OPERATING CONDITONS
Supply Voltage
Positive
VDD
3.15
3.45
V
Negative
VSS
−3.45
−3.15
V
Digital Control Voltage
VCTRL
0
VDD
V
RF Input Power2
PIN
f = 200 MHz to 40 GHz, TCASE = 85°C3
Through Path
RF signal is applied to RFC or through
connected RF1/RF2
27
dBm
Hot Switching
RF signal is present at RFC while switching
between RF1 and RF2
27
dBm
Case Temperature
TCASE
−40
+105
°C
1 For input linearity performance over frequency, see Figure 13 to Figure 16.
2 For power derating over frequency, see Figure 2 and Figure 3.
3 For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 3 dB.



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