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ADRF5024BCCZN-R7 数据表(PDF) 5 Page - Analog Devices

部件名 ADRF5024BCCZN-R7
功能描述  Silicon SPDT Switch, Reflective, 100 MHz to 44 GHz
PDF  13 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5024BCCZN-R7 数据表(HTML) 5 Page - Analog Devices

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Data Sheet
ADRF5024
Rev. C | Page 5 of 13
ABSOLUTE MAXIMUM RATINGS
For the recommended operating conditions, see Table 1.
Table 2.
Parameter
Rating
Positive Supply Voltage
−0.3 V to +3.6 V
Negative Supply Voltage
−3.6 V to +0.3 V
Digital Control Input Voltage
Voltage
−0.3 V to VDD + 0.3 V
Current
3 mA
RF Input Power1 (f = 200 MHz to 40
GHz, TCASE = 85°C2)
Through Path
27.5 dBm
Hot Switching
27.5 dBm
RF Input Power Under Unbiased
Condition1 (VDD, VSS = 0 V)
21 dBm
Temperature
Junction, TJ
135°C
Storage Range
−65°C to +150°C
Reflow
260°C
ESD Sensitivity
Human Body Model (HBM)
RFC, RF1, and RF2 Pins
500 V
Digital Pins
2000 V
Charged Device Model (CDM)
1250 V
1 For power derating vs. frequency, see Figure 2 and Figure 3. This power
derating is applicable for insertion loss path and hot switching power
specifications.
2 For 105°C operation, the power handling degrades from the TCASE = 85°C
specification by 3 dB.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the
operational section of this specification is not implied.
Operation beyond the maximum operating conditions for
extended periods may affect product reliability.
Only one absolute maximum rating can be applied at any one
time.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θJC is the junction to case bottom (channel to package bottom)
thermal resistance.
Table 3. Thermal Resistance
Package Type
θJC
Unit
CC-12-3, Through Path
352
°C/W
POWER DERATING CURVES
–14
–12
–10
–6
–4
–2
–8
0
2
10k
100k
1M
10M
100M
1G
10G
100G
FREQUENCY (Hz)
Figure 2. Power Derating vs. Frequency, Low Frequency Detail, TCASE = 85°C
–14
–12
–6
–8
–10
–4
–2
0
2
35
38
44
50
41
47
FREQUENCY (GHz)
Figure 3. Power Derating vs. Frequency, High Frequency Detail, TCASE = 85°C
ESD CAUTION



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