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ADPA1107ACPZN-R7 数据表(PDF) 19 Page - Analog Devices |
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ADPA1107ACPZN-R7 数据表(HTML) 19 Page - Analog Devices |
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19 / 20 page ![]() Data Sheet ADPA1107 Rev. 0 | Page 19 of 20 THERMAL MANAGEMENT Proper thermal management is critical to achieve the specified performance and rated operating life. Pulsed biasing limits the average power dissipated and maintains a safe channel temperature. The channel (or die) temperature correlates closely with the mean time to failure (MTTF). Consider a continuous bias condition (see Figure 52). When bias is applied, the channel temperature (TCHAN) of the device rises through a turn on transient interval and eventually settles to a steady state value. The θJC of the device is the rise in TCHAN above the starting TBASE divided by the total device PDISS, which is calculated by θJC = tRISE/PDISS (1) where: tRISE is the rise in TCHAN of the device above the TBASE (°C). PDISS is the power dissipation (W) of the device. tRISE = θJC × PDISS TCHAN TBASE TIME Figure 52. Channel Temperature Rise for Continuous Bias Condition Next, consider a pulsed bias condition at a low duty cycle (see Figure 53). When bias is applied, the TCHAN of the device can be described as a series of exponentially rising and decaying pulses. The peak channel temperature reached during consecutive pulses increases during the turn on transient interval, and eventually, settles to a steady state condition where peak channel temperatures from pulse to pulse stabilize. tRISE = θJC × PDISS TCHAN TBASE POWER DISSIPATED DURING THE PULSE TIME Figure 53. Pulsed Bias Condition at a Low Duty Cycle Table 7 shows the thermal resistance values for various pulse conditions. Table 7. Pulse Settings and Thermal Resistance Values Pulse Settings θJC (°C/W) Pulse Width (µs) Duty Cycle (%) 100 10 1.72 100 20 1.76 500 10 2.10 Narrower pulse widths and/or lower duty cycles can result in greater reliability. |
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