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ADRF5515ABCPZN-R7 数据表(PDF) 4 Page - Analog Devices |
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ADRF5515ABCPZN-R7 数据表(HTML) 4 Page - Analog Devices |
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4 / 15 page ![]() Data Sheet ADRF5515A SPECIFICATIONS analog.com Rev. 0 | 4 of 15 Table 1. Parameter Test Conditions/Comments Min Typ Max Unit RECOMMENDED OPERATING CONDITIONS Supply Voltage (VDD) Range VDD1-CHA, VDD1-CHB, VDD2-CHA, VDD2-CHB, SWVDD‑CHAB 4.75 5 5.25 V Control Voltage Range SWCTRL-CHAB, BP-CHA, BP-CHB, PD-CHAB 0 VDD V RF Input Power at ANT-CHA, ANT‑CHB SWCTRL-CHAB = 5 V, PD-CHAB = 5 V, BP-CHA = BP-CHB = 0 V, TCASE2 = 105°C Continuous wave 43 dBm 9 dB PAR LTE full lifetime average 43 dBm 7 dB PAR LTE single event (<10 sec) average3 46 dBm Case Temperature Range (TCASE) 2 −40 +105 °C Junction Temperature at Maximum TCASE2 Receive operation1 132 °C Transmit operation1 134 °C 1 See Table 6 and Table 7. 2 Measured at EPAD. 3 PAR > 7 dB has not been validated due to measurement setup limited to a maximum RF power of 53 dBm. |
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