Data Sheet

ADRF5515A

Dual-Channel, 3.3 GHz to 4.0 GHz, 20 W Receiver Front End

Rev. 0

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FEATURES

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Integrated dual-channel RF front end

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2-stage LNA and high power silicon SPDT switch

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On-chip bias and matching

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Single-supply operation

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LTE average power (9 dB PAR) full lifetime: 43 dBm

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Gain

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High gain mode: 36 dB typical at 3.6 GHz

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Low gain mode: 17 dB typical at 3.6 GHz

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Low noise figure

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High gain mode: 1.05 dB typical at 3.6 GHz

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Low gain mode: 1.05 dB typical at 3.6 GHz

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High isolation

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RXOUT-CHA and RXOUT-CHB: 47 dB typical

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TERM-CHA and TERM-CHB: 75 dB typical

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Low insertion loss: 0.5 dB typical at 3.6 GHz

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High OIP3: 35 dBm typical

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Power-down mode and low gain mode

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Low supply current

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High gain mode: 95 mA typical at 5 V

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Low gain mode: 48 mA typical at 5 V

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Power-down mode: 13 mA typical at 5 V

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Positive logic control

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6 mm × 6 mm, 40-lead LFCSP package

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Pin compatible with the ADRF5515 and the ADRF5519, and the

10 W versions, ADRF5545A and ADRF5549

APPLICATIONS

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Wireless infrastructure

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TDD massive multiple input and multiple output and active

antenna systems

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TDD-based communication systems

FUNCTIONAL BLOCK DIAGRAM

Figure 1.

GENERAL DESCRIPTION

The ADRF5515A is a dual-channel, integrated RF, front-end, mul-

tichip module designed for time division duplexing (TDD) appli-

cations. The device operates from 3.3 GHz to 4.0 GHz. The

ADRF5515A is configured in dual channels with a cascading,

two-stage low noise amplifier (LNA) and a high-power silicon single-

pole, double-throw (SPDT) switch.

In high gain mode, the cascaded two-stage LNA and switch offer a

low noise figure of 1.05 dB and a high gain of 36 dB at 3.6 GHz,

with an output third-order intercept (OIP3) point of 35 dBm (typical).

In low gain mode, one stage of the two-stage LNA is in bypass,

providing 17 dB of gain at a lower current of 48 mA. In power-down

mode, the LNAs are turned off and the device draws 13 mA.

In transmit operation, when RF inputs are connected to a termi-

nation pin (TERM-CHA or TERM-CHB), the switch provides low

insertion loss of 0.5 dB and handles long-term evolution (LTE)

average power (9 dB peak to average ratio (PAR)) of 43 dBm for

full lifetime operation.

The device comes in an RoHS-compliant, compact, 6 mm × 6 mm,

40-lead lead frame chip scale package (LFCSP).