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ADPA7005CHIP 数据表(PDF) 5 Page - Analog Devices

部件名 ADPA7005CHIP
功能描述  GaAs, pHEMT, MMIC,1 W Power Amplifier, 20 GHz to 44 GHz
PDF  23 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADPA7005CHIP 数据表(HTML) 5 Page - Analog Devices

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Data Sheet
ADPA7005CHIP
Rev. 0 | Page 5 of 23
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. Pin Configuration
Table 6. Pin Function Descriptions
Pin No.
Mnemonic
Description
1
RFIN
RF Signal Input. This pad is ac-coupled and matched to 50 Ω.
2, 12
VGG1, VGG2
Amplifier Gate Control. External bypass capacitors of 4.7 μF, 0.01 μF, and 100 pF are
required. ESD protection diodes are included and turn on below −1.5 V.
3, 4, 5, 9, 10, 11
VDD5, VDD3, VDD1, VDD2, VDD4, VDD6
Drain Bias for the amplifier. External bypass capacitors of 4.7 μF, 0.01 μF, and 100 pF
are required.
6
VREF
Reference Diode. Use this pin in combination with VDET. The voltage provides
temperature compensation to the VDET RF output power measurements.
7
RFOUT
RF Signal Output. This pad is ac-coupled and matched to 50 Ω.
8
VDET
Detector Diode Used for Measuring the RF Output Power. Detection via this pin
requires the application of a dc bias voltage through an external series resistor. Used
in combination with VREF, the difference voltage, VREF − VDET, is a temperature
compensated dc voltage proportional to the RF output power.
Die Bottom
GND
Ground. The pads and die bottom must be connected to RF and dc ground.
VGG1
VDD5
VDD1
VREF
RFIN
RFOUT
VDET
VDD2
VDD4
VDD6
VGG2
9
1
7
10
11
12
VDD3
2
3
5
6
8
4
ADPA7005
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