GaAs, pHEMT, MMIC,1 W Power Amplifier,

20 GHz to 44 GHz

Data Sheet

ADPA7005CHIP

Rev. 0

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FEATURES

Output P1dB: 31 dBm typical at 20 GHz to 34 GHz

Gain: 17 dB typical at 20 GHz to 34 GHz

Output IP3: 41 dBm typical at 20 GHz to 34 GHz

Supply voltage: 5 V at 1200 mA maximum

50 Ω matched input/output

Die size: 3.75 mm × 3.47 mm × 0.1 mm

APPLICATIONS

Military and space

Test instrumentation

FUNCTIONAL BLOCK DIAGRAM

Figure 1.

GENERAL DESCRIPTION

The ADPA7005CHIP is a gallium arsenide (GaAs),

pseudomorphic high electron mobility transistor (pHEMT),

monolithic microwave integrated circuit (MMIC), distributed

power amplifier that operates from 20 GHz to 44 GHz. The

amplifier provides 17 dB of small signal gain, 31 dBm output

power for 1 dB compression (P1dB), and a typical output third-

order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires

features inputs and outputs that are internally matched to 50 Ω,

facilitating integration into multichip modules (MCMs). All

data is taken with the chip connected via two 0.025 mm wire

bonds that are at least 0.31 mm long.

VREF

RFIN

RFOUT

VDET