18 GHz to 44 GHz, GaAs, pHEMT, MMIC,

1/2 W Power Amplifier

Data Sheet

ADPA7006CHIP

Rev. 0

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FEATURES

Output P1dB: 29 dBm

Gain: 23.5 dB

Output IP3: 38 dBm

Supply voltage: 5 V at 800 mA

Integrated power detector

50 Ω matched input/output

Die size: 2.750 mm × 1.805 mm × 0.102 mm

APPLICATIONS

Military and space

Test instrumentation

Communications

FUNCTIONAL BLOCK DIAGRAM

VREF

RFIN

RFOUT

VDET

Figure 1.

GENERAL DESCRIPTION

The ADPA7006CHIP is a gallium arsenide (GaAs),

pseudomorphic high electron mobility transistor (pHEMT),

monolithic microwave integrated circuit (MMIC), distributed

power amplifier that operates from 18 GHz to 44 GHz. The

amplifier provides 23.5 dB of small signal gain, 29 dBm output

power for 1 dB compression, and a typical output third-order

intercept of 38 dBm. The ADPA7006CHIP requires 800 mA

inputs and outputs that are internally matched to 50 Ω, facilitating

integration in multichip modules (MCMs). All data is taken

with the chip connected via two 0.025 mm wire bonds that are

less than 0.31 mm long.