| 数据搜索系统,热门电子元器件搜索 |
|
VC-830 数据表(PDF) 2 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
VC-830 数据表(HTML) 2 Page - Microchip Technology |
|
2 / 18 page ![]() VC-830 DS20006510B-page 2 2021 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Supply Voltage .......................................................................................................................................... –0.3V to +4.5V Enable Disable Voltage .....................................................................................................................–0.3V to VDD + 0.3V ESD Rating, Human Body Model (Note 1).................................................................................................................2 kV ESD Rating, Charged Device Model (Note 1)...........................................................................................................200V Storage Temperature (TS)......................................................................................................................–40°C to +125°C Junction Temperature (TJ).....................................................................................................................................+150°C † Notice: Stresses in excess of the Absolute Maximum Ratings can permanently damage the device. Functional operation is not implied at these or any other conditions in excess of conditions represented in the operational sections of this data sheet. Exposure to Absolute Maximum Ratings for extended periods may adversely affect device reliability. Note 1: Although ESD protection circuitry has been designed into the VC-830, proper precautions should be taken when handling and mounting. Microchip employs a Human Body Model (HBM) and a Charged Device Model (CDM) for ESD susceptibility testing and design protection evaluation. ESD thresholds are dependent on the circuit parameters used to define the model. Although no industry standard has been adopted for the CDM, a standard resistance of 1.5 kΩ and capacitance of 100 pF is widely used and therefore can be used for comparison purposes. ELECTRICAL CHARACTERISTICS, LVPECL OPTION Parameter Sym. Min. Typ. Max. Units Conditions Supply Voltage (Note 1) VDD 2.375 2.5 2.625 V Ordering Option 3.135 3.3 3.465 Current Consumption IDD — — 66 mA — Frequency Nominal Frequency fN 100 — 200 MHz Ordering Option Stability (Note 2) — — — ±25 ppm Ordering Option — — ±30 — — ±50 — — ±100 Outputs Output Logic Level High (Note 3) VOH VDD – 1.085 — VDD – 0.880 V VDD = +2.5V Output Logic Level Low (Note 3) VOL VDD – 1.810 — VDD – 1.620 Output Logic Level High (Note 3) VOH VDD – 1.085 — VDD – 0.880 V VDD = +3.3V Output Logic Level Low (Note 3) VOL VDD – 1.810 — VDD – 1.620 Note 1: The VC-830 power supply should be filtered. For example, a 10 µF, 0.1 µF, and 0.01 µF capacitor. 2: Includes calibration tolerance, operating temperature, supply voltage variations, aging, and IR reflow. 3: Figure 1-1 defines the test circuit and Figure 1-2 defines these parameters. 4: Output rise and fall time will be 600 ps (max.) for –40°C to +105°C operating temperature range. 5: Duty Cycle is measured as On/Time Period. 6: Measured using an Agilent E5052 Signal Source Analyzer at 25°C. 7: Outputs will be enabled if Enable/Disable is left open. There is an oscillation detection circuit that ensures glitch free output upon power-up or enable. 8: In order to reduce current, the pull-up resistance is higher when VDD is set to ground. |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |