11/23

MTC20455

Input/Output CMOS Generic Characteristics

The values presented in the following table apply for all CMOS inputs and/ or outputs unless specified oth-

erwise.

Table 7. TTL IO buffers generic characteristics

* The reference current is dependent on the exact buffer chosen and is part of the buffer name. The available values are 4 and 8mA.

Input/Output TTL Generic Characteristics

The values presented in the following table apply for all TTL inputs and/or outputs unless specified other-

wise.

Table 8. TTL IO buffers generic characteristics

* The reference current is dependent on the exact buffer chosen and is part of the buffer name. The available values are 2,4, and 8mA.

Operating Conditions

Table 9. Operating Conditions

DC Electrical Characteristics

All voltages are referenced to VSS, unless otherwise specified, positive current is towards the device

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VIL

Low level input voltage

0.2*VDD

V

VIH

High level input voltage

0.8*vDD

V

VHY

Schmitt trigger hysteresis

slow edge <1V/µs

only for SCHMITT

0.8

V

VOL

Low level output voltage

IOUT = XMa*

0.4

V

VOH

High level output voltage

IOUT = -Xma*

0.85*vDD

V

DC Electrical Characteristics, important for transient but measured at (near) DC.

All voltages are referenced to VSS, unless otherwise specified, positive current is towards the device

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VIL

Low level input voltage

0.8

V

VIH

High level input voltage

2.0

V

VILHY

Low level threshold, falling slow edge < 1V/µs

0.9

1.35

V

VIHHY

High level threshold,

rising

slow edge < 1V/µs

1.3

1.9

V

VHY

Schmitt trigger hysteresis

slow edge <1V/µs

0.4

0.7

V

VOL

Low level output voltage

IOUT = XMa*

0.4

V

VOH

High level output voltage

IOUT = -Xma*

2.4

V

Maximum ratings

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VDDIO

IO Supply voltage

3.0

3.3

3.6

V

VDD

Core Supply voltage

1.62

1.8

2.0

V

TA

Ambient temperature

1m/s airflow

-40

+85

°C

P

Power dissipation

1000

mW