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ADP5092ACPZ-1-R7 数据表(PDF) 23 Page - Analog Devices

部件名 ADP5092ACPZ-1-R7
功能描述  Ultralow Power Energy Harvester PMUs with MPPT and Charge Management
PDF  28 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP5092ACPZ-1-R7 数据表(HTML) 23 Page - Analog Devices

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Data Sheet
ADP5091/ADP5092
Rev. A | Page 23 of 28
APPLICATIONS INFORMATION
The ADP5091/ADP5092 extract the energy from the VIN pin
to charge the SYS and the BAT pins. This process occurs in
three stages: cold start, asynchronous boost, and synchronous
boost. This section describes the procedures for selecting the
external components to maintain the energy transmission
system with the layout and assembly considerations.
ENERGY HARVESTER SELECTION
The energy harvester input source must provide a minimum level
of power for cold start, asynchronous boost, and synchronous
boost. To estimate the minimum input power required to
complete the cold start using the following equation:
VIN × IIN × ηCOLD > VSYS_TH × ISYS_LOAD
(13)
where:
VIN is clamped to VIN_COLD = 380 mV (typical), which indicates
the minimum input voltage for cold start.
IIN is the input current.
ηCOLD is the cold start efficiency, which is about 5% to 7%.
(VSYS_TH is the end of cold start operation.
ISYS_LOAD is the system load current of the SYS pin. Minimizing
the system load accelerates the cold start. Programming the
PGOOD threshold to enable the system load current is
recommended.
After the ADP5091/ADP5092 complete the cold start, the MPPT
function enables. To meet the average system load current, the
input source must provide the boost regulator with enough power
to fully charge the storage element while the system is in low
power or sleep mode. To estimate the power required by the
system, use the following equation:
VIN × IIN × ηBOOST > VBAT_TERM × (ISTR_LEAK + ISYS_LOAD)
(14)
where:
VIN is regulated to the MPPT pin voltage (MPPT ratio × OCV).
IIN is the input current.
ηBOOST is the boost regulator efficiency. See Figure 5 through
Figure 12 in the Typical Performance Characteristics section for
more information.
VBAT_TERM is the battery terminal charging threshold (see Table 1).
ISTR_LEAK is the storage element leakage current at the BAT pin.
ISYS_LOAD is the average system load current of the SYS pin.
Table 10. Recommended Solar Cells
Vendor
Device Type
Alta Devices
GaAs
Fujikura
Dye sensitized solar cell
Gcell
Dye sensitized solar cell
ElectricFilm
Dye sensitized solar cell
ENERGY STORAGE ELEMENT SELECTION
To protect the storage element from overcharging or overdis-
charging, the storage element must be connected to the BAT pin
and the system load tied to the SYS pin. The ADP5091/ADP5092
support many types of storage elements, such as rechargeable
batteries, super capacitors, and conventional capacitors. A
storage element with a 100 µF equivalent capacitance is required
to filter the pulse currents of the PFM switching converter. The
storage element capacity must provide the entire system load
when the input source is no longer generating power.
If there is a high pulse current or the storage element has
significant impedance, it may be necessary to increase the SYS
capacitor from the 4.7 µF minimum, or add additional capacitance
to the BAT pin to prevent a droop in the SYS voltage. Note that
increasing the SYS capacitor causes the boost regulator to operate
in the less efficient cold start stage for a longer period at startup.
If the application is unable to accept the longer cold start time,
place the additional capacitor parallel to the storage element. See
the Capacitor Selection section for more information.
INDUCTOR SELECTION
The boost regulator needs an appropriate inductor for proper
operation. The inductor saturation current must be at least 30%
higher than the expected peak inductor currents, as well as a
low series resistance (DCR) to maintain high efficiency. The
boost regulator internal control circuitry is designed to optimize
the efficiency and control the switching behavior with a nominal
inductance of 22 µH ± 20%. Table 11 lists some of the
recommended inductors.
Table 11. Recommended Inductors
Vendor
Device No.
L (µH)
ISAT (A)1
IRMS (A)2
DCR (mΩ)
Würth Elektronik
74437324220
22
2
1
470
744042220
22
0.6
0.88
255
Coilcraft
LPS4018-223M
22
0.8
0.65
360
1
ISAT is the dc current that causes the 20% inductance drop from its value without current.
2
IRMS is the current that causes a 20°C rise from a 25°C ambient temperature.



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