MPC8560CPX667JC datasheet(21/108 Pages) NXP

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MPC8560 Integrated Processor Hardware Specifications, Rev. 4.2

Freescale Semiconductor

DDR SDRAM

Figure 5 provides the AC test load for the DDR bus.

Figure 5. DDR AC Test Load

MDQS epilogue end

tDDSHME

1.5

4.0

7, 8

Notes:

1.The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state) (reference)(state) for

inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR

timing (DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (OX or DX). For

example, tDDKHOV symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H)

state until outputs (O) are valid (V) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK

memory clock reference (K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.

2.All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V.

3.Maximum possible clock skew between a clock MCK[n] and its relative inverse clock MCK[n], or between a clock MCK[n]

and a relative clock MCK[m] or MSYNC_OUT. Skew measured between complementary signals at GVDD/2.

4.ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK and MDQ/MECC/MDM/MDQS.

5.Note that tDDSHMH follows the symbol conventions described in note 1. For example, tDDSHMH describes the DDR timing

(DD) from the rising edge of the MSYNC_IN clock (SH) until the MDQS signal is valid (MH). tDDSHMH can be modified

through control of the DQSS override bits in the TIMING_CFG_2 register. These controls allow the relationship between

the synchronous clock control timing and the source-synchronous DQS domain to be modified by the user. For best

turnaround times, these may need to be set to delay tDDSHMH an additional 0.25tMCK. This will also affect tDDSHMP and

tDDSHME accordingly. See the MPC8560 PowerQUICC III Integrated Communications Processor Reference Manual for

a description and understanding of the timing modifications enabled by use of these bits.

6.Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC

(MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the MPC8560.

7.All outputs are referenced to the rising edge of MSYNC_IN (S) at the pins of the MPC8560. Note that tDDSHMP follows the

symbol conventions described in note 1. For example, tDDSHMP describes the DDR timing (DD) from the rising edge of

the MSYNC_IN clock (SH) for the duration of the MDQS signal precharge period (MP).

8.Guaranteed by design.

9.Guaranteed by characterization.

Table 17. DDR SDRAM Measurement Conditions

Symbol

DDR

Unit

Notes

VTH

MVREF ± 0.31 V

VOUT

0.5

× GVDD

Notes:

1.Data input threshold measurement point.

2.Data output measurement point.

Table 16. DDR SDRAM Output AC Timing Specifications–DLL Mode (continued)

At recommended operating conditions with GVDD of 2.5 V ± 5%.

Parameter

Symbol 1

Min

Max

Unit

Notes

Output

GVDD/2

RL = 50 Ω

Z0 = 50 Ω

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