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MPC8560CPX667JC 数据表(PDF) 13 Page - NXP Semiconductors |
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MPC8560CPX667JC 数据表(HTML) 13 Page - NXP Semiconductors |
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13 / 108 page ![]() MPC8560 Integrated Processor Hardware Specifications, Rev. 4.2 Freescale Semiconductor 13 Power Characteristics 3 Power Characteristics The estimated power dissipation on the VDD supply for the MPC8560 is shown in Table 4. The estimated power dissipation on the AVDD supplies for the MPC8560 PLLs is shown in Table 5. Table 4. MPC8560 VDD Power Dissipation 1,2 CCB Frequency (MHz) Core Frequency (MHz) Typical Power3,4 Maximum Power5 Unit 200 400 5.1 7.7 W 500 5.4 8.0 600 5.8 8.4 267 533 6.0 8.7 W 667 6.4 9.2 800 6.9 10.7 333 667 6.8 9.8 W 833 7.4 11.4 1000 6 11.9 16.5 Notes: 1. The values do not include I/O supply power (OVDD, LVDD, GVDD) or AVDD. 2. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, air flow, power dissipation of other components on the board, and board thermal resistance. Any customer design must take these considerations into account to ensure the maximum 105 °C junction temperature is not exceeded on this device. 3. Typical Power is based on a nominal voltage of VDD = 1.2 V, a nominal process, a junction temperature of Tj = 105 °C, and a Dhrystone 2.1 benchmark application. 4. Thermal solutions will likely need to design to a number higher than Typical Power based on the end application, TA target, and I/O power. 5. Maximum power is based on a nominal voltage of VDD = 1.2 V, worst case process, a junction temperature of Tj = 105 °C, and an artificial smoke test. 6. The nominal recommended VDD is 1.3 V for this speed grade. Table 5. MPC8560 AVDD Power Dissipation AVDDnTypical 1 Unit AVDD1 0.007 W AVDD2 0.014 W AVDD3 0.004 W Notes: 1. VDD = 1.2 V(1.3 V for 1.0 GHz device), TJ = 105°C |
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