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STM8L151C2 数据表(PDF) 86 Page - STMicroelectronics |
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STM8L151C2 数据表(HTML) 86 Page - STMicroelectronics |
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86 / 123 page ![]() Electrical parameters STM8L151x2, STM8L151x3 86/123 DS7204 Rev 11 Figure 31. Typical NRST pull-up current Ipu vs VDD The reset network shown in Figure 32 protects the device against parasitic resets. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max. level specified in Table 41. Otherwise the reset is not taken into account internally. For power consumption sensitive applications, the external reset capacitor value can be reduced to limit the charge/discharge current. If the NRST signal is used to reset the external circuitry, attention must be paid to the charge/discharge time of the external capacitor to fulfill the external devices reset timing conditions. The minimum recommended capacity is 10 nF. Figure 32. Recommended NRST pin configuration 1.8 1.95 2.1 2.25 2.4 2.55 2.7 2.85 3 3.15 3.3 3.45 3.6 120 100 80 60 40 20 0 VDD [V] -40°C 25°C 85°C ai18225b R PU NRST External reset circuit (Optional) 0.1 uF Filter Internal reset STM8 MS34928V1 VDD |
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