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STM8L151C2 数据表(PDF) 100 Page - STMicroelectronics

部件名 STM8L151C2
功能描述  8-bit ultra-low-power MCU, up to 8 KB Flash, up to 256 bytes data EEPROM, RTC, timers, USART, I2C, SPI, ADC, comparators
PDF  123 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8L151C2 数据表(HTML) 100 Page - STMicroelectronics

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Electrical parameters
STM8L151x2, STM8L151x3
100/123
DS7204 Rev 11
Figure 41. Max. dynamic current consumption on VREF+ supply pin during ADC
conversion
9.3.13
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
•
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 61000 standard.
•
FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 61000 standard.
MS18181V2
ADC clock
Sampling (n cycles)
Conversion (12 cycles)
Iref+
300μA
700μA
Table 52. RAIN max for fADC = 16 MHz
tS
(cycles)
tS
(µs)
RAIN max (kohm)
Slow channels
Fast channels
2.4 V < VDDA < 3.6 V 1.8 V < VDDA < 2.4 V 2.4 V < VDDA < 3.3 V 1.8 V < VDDA < 2.4 V
4
0.25
Not allowed
Not allowed
0.7
Not allowed
9
0.5625
0.8
Not allowed
2.0
1.0
16
1
2.0
0.8
4.0
3.0
24
1.5
3.0
1.8
6.0
4.5
48
3
6.8
4.0
15.0
10.0
96
6
15.0
10.0
30.0
20.0
192
12
32.0
25.0
50.0
40.0
384
24
50.0
50.0
50.0
50.0



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